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BWHMU12 ADUM5401 IN4741 SEL2413E MOC3051 08775 MBRF1050 9980A
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  a d v a n c e d s e m i c o n d u c t o r, i n c. rev. b 7525 ethel avenue ? north hollywood, ca 91605 ? (818) 982-1200 ? fax (818) 765-3004 1/1 specifications are subjec t to change without notice. characteristic s t c = 25 o c symbol test conditions minimum typical maximum units i p v t = 25 v 423 517 a z t v t = 25 v 2.70 m ? z k v k = 6.0 v 750 k ? v l i l = 338 a 1.05 v silicon current regulator diode 1N5290 description: the 1N5290 is silicon constant current diode designed for general purpose power supply and signal processing applications. features include: ? i p = 470 a nominal ? z t = 2.70 m ? minimum ? hermetic do-35 package maximum ratings p ov 100 v p diss 600 mw @ t c = 75 o c t j -55 o c to +200 o c t stg -55 o c to +200 o c jc 210 o c/w package style do-35


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